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MG200Q2SYS50

Description:
Toshiba,IGBT, Silicon N Channel Dual 1200V 200A 3rd Generation PREPPED FOR BOARD, Used Data Sheet


Notices:
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Minimum Order: $50.00, Export $100.00 USD.
*Price For: 1 Each. Price does not include Shipping.
Prices Subject Change Without Notice
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This is surplus. There are no documents nor certificates available.

Product Details:
Manufacturer: Toshiba
Manufacturer Part No: MG200Q2SYS50
Category: IGBT
Description: Silicon N Channel Dual 1200V 200A 3rd Generation PREPPED FOR BOARD
Condition: Used
Lot/Date Code: 6F
Parts Per Package: 0
Packaging: Bulk
SKU: 02012022130206363174

Documents:
Data Sheet


Specifications:
Parameter
Value
UOM
Collector Current (IC)
200
A
Elements (Elements)
2
Voltage Collector-Emitter Maximum (VCEO Max )
1200
V
Semiconductor Material
Silicon (Si)
Polarity (Pol)
N-Channel
Junction Type
Insulated Gate Bipolar Transistor (IGBT)


Author: Search Electronics
Updated: 12/2/2022
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